Enhanced performance through trap states passivation in quantum dot light emitting diode

Device performance enhancement in quantum dot light-emitting diodes (QLEDs) is realized by adding a small amount of insulating polymer polymethyl methacrylate (PMMA) into the emitting layer. Pool-Frenkel effect observed through temperature-dependent current density-voltage experiments, indicating important role trap states, and addition PMMA helps to reduce Poole-Frenkel barrier hence depth. Reduced density depth states with are indeed further capacitance measurements. This work contributes better understanding on effects traps QLEDs.